to-220 -3l /to-220f plastic-encapsulate mosfets cjp10n60,CJPF10N60 n-channel power mosfet description the cjp10n60/CJPF10N60 is a high voltage and high current power mosfet, designed to have c haracteristics, such as fast switching time, low gate charge, low on-state resistance and have rugged avalanche characteristics. this power mosfet is usually used at high speed switching applications in power supplies, pwm motor controls, high efficient dc to dc converters and bridge circuits. features z low c rss z fast s witching z 100% avalanche tested maximum ratings (t a =25 unless otherwise noted) parameter symbol value unit drain-source voltage v ds 600 gate-source voltage v gs 30 v continuous drain current i d 10 a power dissipation p d 2 w thermal resistance from junction to ambient r ja 62.5 /w junction temperature t j 150 storage temperature t stg -50 ~+150 1. gate 2. drain 3. source 1.gate 3.source 2.drain to-220 -3l /to-220f 1 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification c,mar,2014
electrical characteristics (t a =25 unless otherwise noted) parameter symbol test condition min typ max unit drain-source breakdown voltage v (br) dss v gs = 0v, i d =250a 600 gate-threshold voltage (note1) v gs(th) v ds =v gs , i d =250a 2.0 4.0 v gate-body leakage current (note1) i gss v ds =0v, v gs =30v 100 na zero gate voltage drain current i dss v ds =600v, v gs =0v 10 a drain-source on-state resistance (note1) r ds(on) v gs =10v, i d =5a 1 ? input capacitance c iss 1430 output capacitance c oss 117 reverse transfer capacitance c rss v ds =25v,v gs =0v, f =1mhz 2.2 pf turn-on delay time t d (on) 46 rise time t r 74 turn-off delay time t d(off) 340 fall time t f v dd =325v, i d =10a, r g =25 ? 66 n s forward on voltage(note1) v sd v gs =0v, i s =10a 1.4 v notes: 1. pulse test : pulse width 300s, duty cycle 2 %. 2 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification c,mar,2014
01234567 0 2 4 6 8 10 12 25 50 75 100 125 0 1 2 3 4 5 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1e-3 0.01 0.1 1 10 24681012 0 1 2 3 4 5 6 7 246810 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 10203040 0 2 4 6 8 10 v ds =50v pulsed drain current i d (a) gate to source voltage v gs (v) transfer characteristics t a =100 t a =25 i d =250ua threshold voltage threshold voltage v th (v) junction temperature t j ( ) pulsed source current i s (a) source to drain voltage v sd (v) v sd i s ?? t a =100 t a =25 pulsed i d =5a r ds(on) ?? v gs on-resistance r ds(on) ( ) gate to source voltage v gs (v) t a =100 t a =25 t a =25 pulsed on-resistance r ds(on) ( ) drain current i d (a) i d ?? r ds(on) v gs =10v 1 v gs =5v pulsed cjp /pf 10n60 output characteristics drain current i d (a) drain to source voltage v ds (v) v gs = 6v 8v 10v v gs =4.5v 3 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification c,mar,2014
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